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Datasheet MRFG35005MT1 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 1 | MRFG35005MT1 | Gallium Arsenide PHEMT RF Power Field Effect Transistor
Freescale Semiconductor Technical Data
Document Number: MRFG35005MT1 Rev. 2, 5/2005
Gallium Arsenide PHEMT
RF Power Field Effect Transistor
Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use i |
 Freescale Semiconductor |
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MRFG35005 Datasheet ( Hoja de datos ) - resultados coincidentes |
| Número de pieza | Descripción | Fabricantes | |
| MRFG35005MT1 | Gallium Arsenide PHEMT RF Power Field Effect Transistor |
Freescale Semiconductor |
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| MRFG35005NT1 | Gallium Arsenide PHEMT RF Power Field Effect Transistor |
Freescale Semiconductor |
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