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Datasheet MRFG35010 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | MRFG35010 | Gallium Arsenide PHEMT RF Power Field Effect Transistor
Freescale Semiconductor Technical Data
MRFG35010 Rev. 6, 12/2004
Gallium Arsenide PHEMT
RF Power Field Effect Transistor
Designed for WLL/MMDS or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB or Class A l |
 Freescale Semiconductor |
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| 3 | MRFG35010ANT1 | Gallium Arsenide PHEMT
Freescale Semiconductor Technical Data
Document Number: MRFG35010AN Rev. 0, 5/2006
Gallium Arsenide PHEMT
RF Power Field Effect Transistor
Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in |
Freescale Semiconductor |
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| 2 | MRFG35010AR1 | Gallium Arsenide PHEMT RF Power Field Effect Transistor
Freescale Semiconductor Technical Data
Document Number: MRFG35010A Rev. 1, 6/2006
Gallium Arsenide PHEMT
RF Power Field Effect Transistor
Designed for WiMAX, WLL/MMDS or UMTS driver and final applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable |
Freescale Semiconductor |
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| 1 | MRFG35010MT1 | Gallium Arsenide PHEMT
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Freescale Semiconductor, Inc.
Order this document by MRFG35010MT1/D
The RF GaAs Line
Gallium Arsenide PHEMT
RF Power Field Effect Transistor
Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Dev |
 Motorola Semiconductors |
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