Datasheet MRFG35010ANT1 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	MRFG35010ANT1	Gallium Arsenide PHEMT Freescale Semiconductor Technical Data Document Number: MRFG35010AN Rev. 0, 5/2006 Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in	Freescale Semiconductor

MRFG35010A Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
MRFG35010AR1	Gallium Arsenide PHEMT RF Power Field Effect Transistor Freescale Semiconductor Technical Data Document Number: MRFG35010A Rev. 1, 6/2006 Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WiMAX, WLL/MMDS or UMTS driver and final applications. Characterized from 500 to 5000 MHz. Device is unmat	Freescale Semiconductor
MRFG35010ANT1	Gallium Arsenide PHEMT Freescale Semiconductor Technical Data Document Number: MRFG35010AN Rev. 0, 5/2006 Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is	Freescale Semiconductor

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