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MS1307 데이터시트 PDF 검색 결과

번호 부품번호 상세설명 및 전자부품 기능 제조사 PDF
6 MS1329   RF & MICROWAVE TRANSISTORS

RF & MICROWAVE TRANSISTORS VHF FM APPLICATIONS Features • 150 MHz • 28 VOLTS • POUT = 60W • GP = 7.0 dB MINIMUM • COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1629 is an epitaxial silicon NPN transistor designed primarily for 12.5 V Class C, AM am

Advanced Power Technology
Advanced Power Technology
MS1329 pdf 데이터시트
5 MS1336   RF & MICROWAVE TRANSISTORS

140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS Features • 175 MHz • 12.5 VOLTS • POUT = 30W MINIMUM • GP = 10 dB GAIN • COMMON EMITTER CONFIGURATION DESCR

Advanced Power Technology
Advanced Power Technology
MS1336 pdf 데이터시트
4 MS1337   RF & MICROWAVE TRANSISTORS

RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS Features • 175 MHz • 12.5 VOLTS • POUT = 30W MINIMUM • GP = 10 dB GAIN • COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1337 is a 12.5 volt epitaxial silicon NPN planar transistor designed primarily

Advanced Power Technology
Advanced Power Technology
MS1337 pdf 데이터시트
3 MS13N30   N-Channel 30-V (D-S) MOSFET

MS13N30 N-Channel 30-V (D-S) MOSFET Description These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applic

Bruckewell
Bruckewell
MS13N30 pdf 데이터시트
2 MS13N50   N-Channel MOSFET

MS13N50 500V N-Channel MOSFET Description The MS13N50 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universa

Bruckewell
Bruckewell
MS13N50 pdf 데이터시트


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