Datasheet MTB36N06E Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	MTB36N06E	TMOS POWER FET 36 AMPERES 60 VOLTS MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB36N06E/D ™ Data Sheet TMOS E-FET.™ High Energy Power FET D2PAK for Surface Mount Designer's MTB36N06E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate The D2PAK package has the capability of housing a large	Motorola Semiconductors

MTB36N Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
MTB36N06E	TMOS POWER FET 36 AMPERES 60 VOLTS MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB36N06E/D ™ Data Sheet TMOS E-FET.™ High Energy Power FET D2PAK for Surface Mount Designer's MTB36N06E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate The D2PAK package has the capabilit	Motorola Semiconductors
MTB36N06V	TMOS POWER FET 32 AMPERES 60 VOLTS MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MTB36N06V/D TMOS Power Field Effect Transistor D2PAK for Surface Mount TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new tec	Motorola Semiconductors
MTB36N06V	Power MOSFET ( Transistor ) MTB36N06V Preferred Device Power MOSFET 32 Amps, 60 Volts N−Channel D2PAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor con	ON Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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