Datasheet MTB3N120E Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	MTB3N120E	TMOS POWER FET 3.0 AMPERES 1200 VOLTS MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB3N120E/D ™ Data Sheet TMOS E-FET.™ High Energy Power FET D2PAK for Surface Mount Designer's MTB3N120E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate The D2PAK package has the capability of housing a large	Motorola Semiconductors

MTB3N1 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
MTB3N120E	TMOS POWER FET 3.0 AMPERES 1200 VOLTS MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB3N120E/D ™ Data Sheet TMOS E-FET.™ High Energy Power FET D2PAK for Surface Mount Designer's MTB3N120E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate The D2PAK package has the capabilit	Motorola Semiconductors
MTB3N100E	TMOS POWER FET 3.0 AMPERES 1000 VOLTS MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB3N100E/D ™ Data Sheet TMOS E-FET.™ High Energy Power FET D2PAK for Surface Mount Designer's MTB3N100E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate The D2PAK package has the capabilit	Motorola Semiconductors
MTB3N100E	High Energy Power FET MTB3N100E Designer’s™ Data Sheet TMOS E−FET.™ High Energy Power FET D2PAK for Surface Mount N−Channel Enhancement−Mode Silicon Gate http://onsemi.com TMOS POWER FET The D2PAK package has the capability of housing a larger die than any existing surface mount packa	ON Semiconductor

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nuevas actualizaciones

Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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