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Datasheet MTB4N80E Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | MTB4N80E | TMOS POWER FET 4.0 AMPERES 800 VOLTS MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MTB4N80E/D
™ Data Sheet TMOS E-FET.™ High Energy Power FET D2PAK for Surface Mount
Designer's
MTB4N80E
Motorola Preferred Device
N–Channel Enhancement–Mode Silicon Gate
The D2PAK package has the capability of housing a larger |
 Motorola Semiconductors |
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| 1 | MTB4N80E1 | TMOS POWER FET 4.0 AMPERES 800 VOLTS MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MTB4N80E1/D
Product Preview
TMOS E-FET.™ High Energy Power FET D2PAK-SL Straight Lead
N–Channel Enhancement–Mode Silicon Gate
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking cap |
Motorola Semiconductors |
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