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Datasheet MTB55N06Z Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | MTB55N06Z | TMOS POWER FET 55 AMPERES 60 VOLTS MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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Advance Information
TMOS E-FET.™ High Energy Power FET D2PAK for Surface Mount
N–Channel Enhancement–Mode Silicon Gate
This advanced high voltage TMOS E–FET is designed to withstand high energy in the avalanche mode |
 Motorola Semiconductors |
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| 1 | MTB55N06Z | Power MOSFET ( Transistor ) MTB55N06Z
Preferred Device
Power MOSFET 55 Amps, 60 Volts
N−Channel D2PAK
This Power MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently. This high energy device also offers a drain−to−source diode with fast recovery time. Designed for high voltage, high s |
 ON Semiconductor |
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| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
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