Datasheet MTB5D0P03J3 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	MTB5D0P03J3	P-Channel Enhancement Mode Power MOSFET CYStech Electronics Corp. Spec. No. : C965J3 Issued Date : 2014.09.15 Revised Date : Page No. : 1/9 P-Channel Enhancement Mode Power MOSFET MTB5D0P03J3 BVDSS ID @VGS=-10V RDS(ON)@VGS=-10V, ID=-25A RDS(ON)@VGS=-4.5V, ID=-10A -30V -88A 3.7mΩ(typ) 5.1mΩ(typ) Features • Low Gate Charge • Simpl	Cystech Electonics

MTB5D0P0 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
MTB5D0P03H8	P-Channel Enhancement Mode Power MOSFET CYStech Electronics Corp. Spec. No. : C965H8 Issued Date : 2014.12.12 Revised Date : 2015.03.26 Page No. : 1/ 9 P-Channel Enhancement Mode Power MOSFET MTB5D0P03H8 BVDSS ID@VGS=-10V, TC=25°C ID@VGS=-10V, TA=25°C Features • Single Drive Requirement • Low On-resistance �	Cystech Electonics
MTB5D0P03FP	P-Channel Enhancement Mode Power MOSFET CYStech Electronics Corp. P-Channel Enhancement Mode Power MOSFET MTB5D0P03FP Spec. No. : C965FP Issued Date : 2015.07.20 Revised Date : 2015.07.21 Page No. : 1/8 Features • Single Drive Requirement • Low On-resistance • Fast switching Characteristic • Pb-free lead plat	CYStech Electronics
MTB5D0P03Q8	P-Channel Enhancement Mode Power MOSFET CYStech Electronics Corp. Spec. No. : C965Q8 Issued Date : 2014.12.03 Revised Date : Page No. : 1/9 P-Channel Enhancement Mode Power MOSFET MTB5D0P03Q8 BVDSS ID@VGS=-10V, TA=25°C ID@VGS=-4.5V, TA=25°C ID@VGS=-10V, TC=25°C ID@VGS=-4.5V, TC=25°C Features • Simple drive	Cystech Electonics

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Número de pieza	Descripción	Fabricantes	PDF
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