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Datasheet MTB6N60E1 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | MTB6N60E1 | TMOS POWER FET 6.0 AMPERES 600 VOLTS MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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TMOS E-FET.™ High Energy Power FET D2PAK-SL Straight Lead
N–Channel Enhancement–Mode Silicon Gate
This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. |
 Motorola Semiconductors |
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| 1 | MTB6N60E1 | High Energy Power FET MTB6N60E1
TMOS E−FET.™
High Energy Power FET D2PAK−SL Straight Lead
N−Channel Enhancement−Mode Silicon Gate
http://onsemi.com
This advanced TMOS E−FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain−to |
 ON Semiconductor |
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