|
|
Datasheet MTBA0N10KJ3 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | MTBA0N10KJ3 | N-Channel Enhancement Mode MOSFET CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
MTBA0N10KJ3
Spec. No. : C139J3 Issued Date : 2015.09.30 Revised Date : Page No. : 1/ 9
Features
• Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • ESD Protected Gate • Pb-f |
Cystech Electonics |
MTBA0N10 Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
MTBA0N10Q8 | N-Channel Enhancement Mode Power MOSFET |
CYStech |
|
MTBA0N10KJ3 | N-Channel Enhancement Mode MOSFET |
Cystech Electonics |
Esta página es del resultado de búsqueda del MTBA0N10KJ3. Si pulsa el resultado de búsqueda de MTBA0N10KJ3 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |