Datasheet MW7IC2750NR1 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	MW7IC2750NR1	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Freescale Semiconductor Technical Data Document Number: MW7IC2750N Rev. 0, 5/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for WiMAX base station applications with frequencies up to 2700 MHz. Suitable for WiMAX, WiBro, BWA, and OFDM multicarrier Cl	Freescale Semiconductor

MW7IC2750 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
MW7IC2750NBR1	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Freescale Semiconductor Technical Data Document Number: MW7IC2750N Rev. 0, 5/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for WiMAX base station applications with frequencies up to 2700 MHz. Suitable for WiMAX, WiBro, BWA, and	Freescale Semiconductor
MW7IC2750NR1	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Freescale Semiconductor Technical Data Document Number: MW7IC2750N Rev. 0, 5/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for WiMAX base station applications with frequencies up to 2700 MHz. Suitable for WiMAX, WiBro, BWA, and	Freescale Semiconductor
MW7IC2750GNR1	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Freescale Semiconductor Technical Data Document Number: MW7IC2750N Rev. 0, 5/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for WiMAX base station applications with frequencies up to 2700 MHz. Suitable for WiMAX, WiBro, BWA, and	Freescale Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
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