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Datasheet MWE6IC9100NBR1 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 MWE6IC9100NBR1   RF LDMOS Wideband Integrated Power Amplifiers

ARCHIVE INFORMATION ARCHIVE INFORMATION Freescale Semiconductor Technical Data RF LDMOS Wideband Integrated Power Amplifiers The MWE6IC9100N wideband integrated circuit is designed with on--chip matching that makes it usable from 869 to 960 MHz. This multi--stage structure is rated for 26 to 32 Vo
Freescale Semiconductor
Freescale Semiconductor
datasheet MWE6IC9100NBR1 pdf

MWE6IC9100N Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
MWE6IC9100NR1

RF LDMOS Wideband Integrated Power Amplifiers

ARCHIVE INFORMATION ARCHIVE INFORMATION Freescale Semiconductor Technical Data RF LDMOS Wideband Integrated Power Amplifiers The MWE6IC9100N wideband integrated circuit is designed with on--chip matching that makes it usable from 869 to 960 MHz. This multi--stage structure is r
Freescale Semiconductor
Freescale Semiconductor
datasheet pdf - Freescale Semiconductor
MWE6IC9100NBR1

RF LDMOS Wideband Integrated Power Amplifiers

ARCHIVE INFORMATION ARCHIVE INFORMATION Freescale Semiconductor Technical Data RF LDMOS Wideband Integrated Power Amplifiers The MWE6IC9100N wideband integrated circuit is designed with on--chip matching that makes it usable from 869 to 960 MHz. This multi--stage structure is r
Freescale Semiconductor
Freescale Semiconductor
datasheet pdf - Freescale Semiconductor


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Número de pieza Descripción Fabricantes PDF
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