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Datasheet NDTD0512C Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1NDTD0512CIsolated 3W Wide Input Dual Output DC/DC Converters

www.murata-ps.com NDTD Series Isolated 3W Wide Input Dual Output DC/DC Converters FEATURES „RoHS compliant „Industry standard footprint „Power density 0.90W/cm3 „2:1 Input range, 3W output power, minimum 3:1 input range with power derating to 2W „Dual isolated output „Short circuit pro
muRata
muRata
converter


NDT Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1NDTIsolated 3W Wide Input Dual Output DC-DC Converters

C&D Technologies
C&D Technologies
converter
2NDT014N-Channel Enhancement Mode Field Effect Transistor

September 1996 NDT014 N-Channel Enhancement Mode Field Effect Transistor General Description Power SOT N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to m
Fairchild
Fairchild
transistor
3NDT014LN-Channel Logic Level Enhancement Mode Field Effect Transistor

August 1996 NDT014L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.This very high density process is especi
Fairchild
Fairchild
transistor
4NDT01N60N-Channel Power MOSFET, Transistor

NDD01N60, NDT01N60 N-Channel Power MOSFET 600 V, 8.5 W Features • 100% Avalanche Tested • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Drain−to−Source Voltage Continuous Drain Current RqJC Stea
ON Semiconductor
ON Semiconductor
mosfet
5NDT01N60T1GN-Channel Power MOSFET, Transistor

NDD01N60, NDT01N60 N-Channel Power MOSFET 600 V, 8.5 W Features • 100% Avalanche Tested • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Drain−to−Source Voltage Continuous Drain Current RqJC Stea
ON Semiconductor
ON Semiconductor
mosfet
6NDT02N40N-Channel Power MOSFET, Transistor

NDD02N40, NDT02N40 N-Channel Power MOSFET 400 V, 5.5 W Features • 100% Avalanche Tested • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol NDD NDT Unit Drain−to−Source Voltage Gate−to�
ON Semiconductor
ON Semiconductor
mosfet
7NDT02N60ZN-Channel Power MOSFET, Transistor

NDT02N60Z N-Channel Power MOSFET 600 V, 8.0 W Features • 100% Avalanche Tested • Extremely High dv/dt Capability • Gate Charge Minimized • Zener−protected • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS (TJ = 25°C unless otherwise not
ON Semiconductor
ON Semiconductor
mosfet



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nuevas actualizaciones

Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
PDF


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