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Datasheet NGTB30N120IHSWG Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 NGTB30N120IHSWG   IGBT

NGTB30N120IHSWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss. The IGBT is well suited
 ON Semiconductor
ON Semiconductor		 datasheet NGTB30N120IHSWG pdf

NGTB30N120IH Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
NGTB30N120IHSWG

IGBT

NGTB30N120IHSWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss. The
 ON Semiconductor
ON Semiconductor		 datasheet pdf - ON Semiconductor
NGTB30N120IHRWG

IGBT

NGTB30N120IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on−state vo
 ON Semiconductor
ON Semiconductor		 datasheet pdf - ON Semiconductor
NGTB30N120IHLWG

IGBT

NGTB30N120IHLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss. The
 ON Semiconductor
ON Semiconductor		 datasheet pdf - ON Semiconductor


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