Datasheet P0760ZTF Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	Category
1	P0760ZTF	N-Channel Enhancement Mode MOSFET P0760ZTF / P0760ZTFS N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 600V 640mΩ @VGS = 10V ID 7A TO-220F TO-220FS ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 600 Gate-Source Voltage	UNIKC	mosfet
2	P0760ZTF	N-Channel Field Effect Transistor NIKO-SEM N-Channel High Voltage Mode Field Effect Transistor P0760ZTF:TO-220F P0760ZTFS:TO-220FS Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 600V 640mΩ ID 7A D G S ABSOLUTE MAXIMUN RATINGS(TA=25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Drain-Source V	NIKO-SEM	transistor
3	P0760ZTFS	N-Channel Enhancement Mode MOSFET P0760ZTF / P0760ZTFS N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 600V 640mΩ @VGS = 10V ID 7A TO-220F TO-220FS ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 600 Gate-Source Voltage	UNIKC	mosfet
4	P0760ZTFS	N-Channel Field Effect Transistor NIKO-SEM N-Channel High Voltage Mode Field Effect Transistor P0760ZTF:TO-220F P0760ZTFS:TO-220FS Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 600V 640mΩ ID 7A D G S ABSOLUTE MAXIMUN RATINGS(TA=25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Drain-Source V	NIKO-SEM	transistor

P07 Datasheet ( Hoja de datos ) - resultados coincidentes

N.º	Número de pieza	Descripción	Fabricantes	Catagory
1	P0703BD	N-Channel Enhancement Mode MOSFET P0703BD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 7.5mΩ @VGS = 10V ID 57A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Dra	UNIKC	mosfet
2	P0703ED	P-Channel Enhancement Mode MOSFET P0703ED P-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -30V 7.5mΩ @VGS = -10V ID -68A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS -30 Gate-Source Voltage VGS ±2	UNIKC	mosfet
3	P0703EK	P-Channel Field Effect Transistor NIKO-SEM P-Channel Logic Level Enhancement P0703EK Mode Field Effect Transistor NPAK SOP-8 (Preliminary) Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) -30V 7.5mΩ ID - 30A D G S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMB	NIKO-SEM	transistor
4	P0703EV	P-Channel Enhancement Mode MOSFET P0703EV P-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -30V 7.5mΩ @VGS = -10V ID -15A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS -30 Gate-Source Voltage VGS ±	UNIKC	mosfet
5	P0706BK	N-Channel Field Effect Transistor NIKO-SEM N-Channel Enhancement Mode P0706BK Field Effect Transistor PDFN 5x6P Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 60V 7mΩ ID 57A D G S D D DD #1 S S S G G. GATE D. DRAIN S. SOURCE ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CON	NIKO-SEM	transistor
6	P0720E	solid state crowbar devices Data Book and Design Guide TECCOR ELECTRONICS 1800 Hurd Drive Irving, Texas 75038 United States of America Phone: +1 972-580-7777 Fax: +1 972-550-1309 Web site: http://www.teccor.com E-mail: [email protected] An Invensys company Teccor Electronics is the proprietor of the SIDACtor®, B	Teccor Electronics	data
7	P0720S	SIDACtor Device SIDACtor Device SIDACtor Device DO-214AA SIDACtor solid state protection devices protect telecommunications equipment such as modems, line cards, fax machines, and other CPE. SIDACtor devices are used to enable equipment to meet various regulatory requirements including GR 1089, ITU K.20, K.21 and	Teccor Electronics	data

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Número de pieza	Descripción	Fabricantes	PDF
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