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Datasheet P0806AT Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | P0806AT | N-Channel Enhancement Mode MOSFET P0806AT
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
60V 8.5mΩ @VGS = 10V
ID 82A
TO-220
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 60
Gate-Source Voltage
VGS ±25
Continuous Dra |
 UNIKC |
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| 2 | P0806ATF | N-Channel Enhancement Mode MOSFET P0806ATF
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
60V 8.5mΩ @VGS = 10V
ID 57A
TO-220F
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±25
Continuous Drain Current
TC = 25 °C TC = |
UNIKC |
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| 1 | P0806ATX | N-Channel Enhancement Mode MOSFET P0806ATX
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
60V 8mΩ @VGS = 10V
ID 110A
TO-220
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±20
Continuous Drain Current1 Pulsed Drain Curre |
UNIKC |
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