|
|
Datasheet P0860ETFS Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | P0860ETFS | N-Channel Enhancement Mode MOSFET P0860ETF / P0860ETFS
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
600V
1.05Ω @VGS = 10V
ID 8A
TO-220F TO-220FS
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 600
Gate-Source Voltage
| UNIKC | mosfet |
2 | P0860ETFS | N-Channel Field Effect Transistor NIKO-SEM
N-Channel Enhancement Mode
P0860ETF:TO-220F P0860ETFS:TO-220FS
Field Effect Transistor
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
600V
1.05Ω
ID 8A
D
G S
ABSOLUTE MAXIMUN RATINGS(TA=25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source V | NIKO-SEM | transistor |
P08 Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | P0803BDG | N-Channel Enhancement Mode MOSFET P0803BDG
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 9.2mΩ @VGS = 10V
ID 60A
TO-252
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Dr UNIKC mosfet | | |
2 | P0803BVG | N-Channel Enhancement Mode MOSFET P0803BVG
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 8mΩ @VGS = 10V
ID 13A
SOP- 08
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±20
Continuous Drain Current Pulsed Drain Curren UNIKC mosfet | | |
3 | P0804BD | N-Channel Enhancement Mode MOSFET P0804BD
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
40V 8.5mΩ @VGS = 10V
ID 50A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 40
Gate-Source Voltage
VGS ±20
Continuous Dra UNIKC mosfet | | |
4 | P0804BD8 | N-Channel Enhancement Mode MOSFET P0804BD8
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
40V 8mΩ @VGS = 10V
ID 62A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 40
Gate-Source Voltage
VGS ±20
Continuous Drai UNIKC mosfet | | |
5 | P0804BK | N-Channel Enhancement Mode MOSFET P0804BK
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
40V 8mΩ @VGS = 10V
ID 30A
PDFN 5*6P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 40
Gate-Source Voltage
VGS ±20
TC = 25 °C(P UNIKC mosfet | | |
6 | P0804BVG | N-Channel Enhancement Mode MOSFET P0804BVG
N-Channel Logic Level Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
40V 12mΩ @VGS = 10V
ID 12A
SOP- 08
100% UIS tested 100% Rg tested
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±20
UNIKC mosfet | | |
7 | P0806AT | N-Channel Enhancement Mode MOSFET P0806AT
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
60V 8.5mΩ @VGS = 10V
ID 82A
TO-220
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 60
Gate-Source Voltage
VGS ±25
Continuous Dra UNIKC mosfet | |
Esta página es del resultado de búsqueda del P0860ETFS. Si pulsa el resultado de búsqueda de P0860ETFS se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |