Datasheet P0910ATF Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	P0910ATF	N-Channel Enhancement Mode MOSFET P0910ATF N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 9.5mΩ @VGS = 10V ID 54A TO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current1 Pulsed Drain C	UNIKC

P0910 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
P0910ATG	N-Channel Enhancement Mode MOSFET P0910ATG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 9.5mΩ @VGS = 10V ID 89A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Curr	UNIKC
P0910ATF	N-Channel Enhancement Mode MOSFET P0910ATF N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 9.5mΩ @VGS = 10V ID 54A TO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Cur	UNIKC
P0910A	N-Channel Enhancement Mode MOSFET P0910AS N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 9.5mΩ @VGS = 10V ID 80A TO-263 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Curre	UNIKC

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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