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Datasheet P9006EI Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | P9006EI | P-Channel Enhancement Mode MOSFET P9006EI
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-60V
90mΩ @VGS = -10V
ID -18A
TO-251
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±20
Continuous Drain Current1 Pulsed Drain Cu |
UNIKC |
P900 Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
P9006EDG | P-Channel Logic Level Enhancement |
Niko-Sem |
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P9006EVG | P-Channel Enhancement Mode MOSFET |
UNIKC |
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P9008HV | Dual N-Channel Field Effect Transistor |
NIKO-SEM |
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Número de pieza | Descripción | Fabricantes | |
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