Datasheet PHX2N50E Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	PHX2N50E	PowerMOS transistors Avalanche energy rated Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Isolated package PHX2N50E SYMBOL d QUICK REFERENCE DATA VDSS = 500 V	NXP Semiconductors

PHX2N Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
PHX2N60E	PowerMOS transistors Avalanche energy rated Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Isolated package PHX2N60E SYMBOL d QUICK REFERENC	NXP Semiconductors
PHX2N50E	PowerMOS transistors Avalanche energy rated Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Isolated package PHX2N50E SYMBOL d QUICK REFERENC	NXP Semiconductors
PHX2N40E	PowerMOS transistor Isolated version of PHP4N40E Philips Semiconductors Objective specification PowerMOS transistor Isolated version of PHP4N40E GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a full pack, plastic envelope featuring high avalanche energy capability, stable blocking voltage, fas	NXP Semiconductors

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Número de pieza	Descripción	Fabricantes	PDF
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