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Datasheet PJT7413 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | PJT7413 | 20V P-Channel Enhancement Mode MOSFET PPJT7413
20V P-Channel Enhancement Mode MOSFET – ESD Protected
Voltage
-20 V Current
-2.5A
SOT-363-1
Features
RDS(ON) , [email protected], [email protected]<85mΩ RDS(ON) , [email protected], [email protected]<115mΩ RDS(ON) , [email protected], [email protected]<150mΩ RDS(ON) , [email protected], [email protected]<250mΩ Advanced T |  Pan Jit International | mosfet |
PJT Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | PJT138L | 60V N-Channel Enhancement Mode MOSFET PPJT138L
60V N-Channel Enhancement Mode MOSFET
Voltage
60 V
Current 200mA
Features
RDS(ON) , VGS@10V, ID@200mA<4.2Ω RDS(ON) , [email protected], ID@100mA<5Ω RDS(ON) , [email protected], ID@50mA<7Ω Advanced Trench Process Technology ESD Protected Specially Designed for Relay driver, Pan Jit International mosfet | | |
| 2 | PJT7413 | 20V P-Channel Enhancement Mode MOSFET PPJT7413
20V P-Channel Enhancement Mode MOSFET – ESD Protected
Voltage
-20 V Current
-2.5A
SOT-363-1
Features
RDS(ON) , [email protected], [email protected]<85mΩ RDS(ON) , [email protected], [email protected]<115mΩ RDS(ON) , [email protected], [email protected]<150mΩ RDS(ON) , [email protected], [email protected]<250mΩ Advanced T Pan Jit International mosfet | | |
| 3 | PJT7600 | Complementary Enhancement Mode MOSFET PPJT7600
20V Complementary Enhancement Mode MOSFET – ESD Protected
Voltage 20 / -20V Current 1 / -0.7A
SOT-363
Features
Application
Advanced Trench Process Technology Specially Designed for Switch Load, PWM Application, etc. ESD Protected Lead free in comply with EU RoHS 2011/ Pan Jit International mosfet | | |
| 4 | PJT7603 | Complementary Enhancement Mode MOSFET PPJT7603
Complementary Enhancement Mode MOSFET – ESD Protected
Voltage 50 / -60V Current
0.4A / -0.25A SOT-363
Features
Advanced Trench Process Technology Specially Designed for Switch Load, PWM Application, etc. ESD Protected 2KV HBM Lead free in compliance with EU RoHS 2011/ Pan Jit International mosfet | | |
| 5 | PJT7802 | 20V N-Channel Enhancement Mode MOSFET PPJT7802
20V N-Channel Enhancement Mode MOSFET – ESD Protected
Voltage
20 V
Current
0.5A
SOT-363
Features
RDS(ON) , [email protected], [email protected]<0.4Ω RDS(ON) , [email protected], [email protected]<0.7Ω RDS(ON) , [email protected], [email protected]<1.2Ω(typ.) Advanced Trench Process Technology Specially Designed Pan Jit International mosfet | | |
| 6 | PJT7807 | 20V P-Channel Enhancement Mode MOSFET PPJT7807
20V P-Channel Enhancement Mode MOSFET
Voltage
-20 V Current -500mA
Features
Low Voltage Drive (1.2V). Advanced Trench Process Technology Specially Designed for Load switch, PWM Application, etc. ESD Protected Lead free in compliance with EU RoHS 2011/65/EU
directive Pan Jit International mosfet | | |
| 7 | PJT7812 | 30V N-Channel Enhancement Mode MOSFET PPJT7812
30V N-Channel Enhancement Mode MOSFET – ESD Protected
Voltage
30 V
Current 500mA
SOT-363
Features
RDS(ON) , [email protected], ID@500mA<1.2Ω RDS(ON) , [email protected], ID@200mA<1.6Ω RDS(ON) , [email protected], ID@100mA<2.3Ω RDS(ON) , [email protected], ID@10mA<2.3Ω(typ.) Specially Desig Pan Jit International mosfet | |
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