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Datasheet PMV30XN Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 PMV30XN   3.2A N-channel Trench MOSFET

SO T2 PMV30XN 20 V, 3.2 A N-channel Trench MOSFET Rev. 1 — 22 June 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
NXP Semiconductors
NXP Semiconductors		 datasheet PMV30XN pdf

PMV3 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
PMV32UP

MOSFET ( Transistor )

SO T2 PMV32UP 20 V, 4 A P-channel Trench MOSFET Rev. 1 — 11 March 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench
NXP Semiconductors
NXP Semiconductors		 datasheet pdf - NXP Semiconductors
PMV30UN2

N-channel Trench MOSFET

SOT23 PMV30UN2 20 V, N-channel Trench MOSFET 24 April 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features a
 NXP Semiconductors
NXP Semiconductors		 datasheet pdf - NXP Semiconductors
PMV30UN

uTrenchMOS ultra low level FET

PMV30UN µTrenchMOS™ ultra low level FET Rev. 01 — 25 June 2003 M3D088 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PMV30UN
 NXP Semiconductors
NXP Semiconductors		 datasheet pdf - NXP Semiconductors


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

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