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Datasheet PNA1601M Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | PNA1601M | Silicon NPN Phototransistor Phototransistors
PNA1601M (PN166)
Silicon NPN Phototransistor
For optical control systems Features
High sensitivity Wide spectral sensitivity, suited for detecting various kinds of LEDs
12.5±1.0 0.8 0.5 max. Gate the rest
Unit : mm
2.6±0.2 C0.5 0.8 R0.55 1.4±0.2 1.2±0.2 (0.4)
2.0 0.7
2.5±0. |  Panasonic Semiconductor | transistor |
PNA Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | PNA-1401LF | Silicon NPN Phototransistors Phototransistors
PNA1401LF, PNZ102F
Silicon NPN Phototransistors
PNA1401LF
Unit : mm
ø4.6±0.15 Glass window
For optical control systems Features
Flat window design which is suited to optical systems Low dark current : ICEO = 5 nA (typ.) Fast response : tr, tf = 3 µs (typ.) Wide directional sens Panasonic Semiconductor transistor | | |
| 2 | PNA1401LF | Silicon NPN Phototransistors Phototransistors
PNA1401LF, PNZ102F
Silicon NPN Phototransistors
PNA1401LF
Unit : mm
ø4.6±0.15 Glass window
For optical control systems Features
Flat window design which is suited to optical systems Low dark current : ICEO = 5 nA (typ.) Fast response : tr, tf = 3 µs (typ.) Wide directional sens Panasonic Semiconductor transistor | | |
| 3 | PNA1601M | Silicon NPN Phototransistor Phototransistors
PNA1601M (PN166)
Silicon NPN Phototransistor
For optical control systems Features
High sensitivity Wide spectral sensitivity, suited for detecting various kinds of LEDs
12.5±1.0 0.8 0.5 max. Gate the rest
Unit : mm
2.6±0.2 C0.5 0.8 R0.55 1.4±0.2 1.2±0.2 (0.4)
2.0 0.7
2.5±0. Panasonic Semiconductor transistor | | |
| 4 | PNA1605F | Silicon planar type Phototransistors
PNA1605F (PN116)
Silicon planar type
Unit: mm
For optical control systems
1.5±0.2
4.5±0.15 3.5±0.15
Not soldered 2.0
2.1±0.15 1.6±0.15 0.8±0.1
12.5 min.
10 min.
• High sensitivity • Wide directivity characteristics, suited for detecting GaAs LEDs: θ = 70° (typ.) � Panasonic Semiconductor data | | |
| 5 | PNA1801L | Silicon NPN Phototransistor Phototransistors
PNA1801L (PN168)
Silicon NPN Phototransistor
Unit : mm
Not soldered 2.0 max.
For optical control systems Features
High sensitivity Wide spectral sensitivity, suited for detecting GaAs LEDs Small size, high output power, low cost ø 3 plastic package
15.0±1.0 4.5±0.3
ø3.8±0.2 Panasonic Semiconductor transistor | | |
| 6 | PNA2602 | Darlington Phototransistor Darlington Phototransistors
PNA2602
Darlington Phototransistor
Unit : mm
For optical control systems Features
Darlington output, high sensitivity Easy to combine light emission and photodetection on same printed circuit board Small size, thin side-view type package
4.5±0.3 Not soldered ø3.5±0. Panasonic Semiconductor transistor | | |
| 7 | PNA2602M | Darlington Phototransistor Darlington Phototransistors
PNA2602M
Darlington Phototransistor
Unit : mm
ø3.5±0.2
4.8±0.3 2.4 2.4
4.5±0.3
Not soldered
For optical control systems Features
Darlington output, high sensitivity
36.6±0.5
4.2±0.3 2.3 1.9
Easy to combine light emission and photodetection on same printed circ Panasonic Semiconductor transistor | |
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