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Datasheet QL85I6SA Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | QL85I6SA | Infrared Laser diode QL85I6SA
TECHNICAL DATA
Infrared Laser Diode
Features
• AlGaAs laser diode • Peak Wavelength: 850 nm • Optical Ouput Power: 5 mW • Package: 5.6 mm, with Photo Diode
Electrical Connection
Pin Configuration
m-type PIN Function
1 LD Cathode 2 LD Anode, PD Cathode 3 PD Anode
Bottom View
Absolu |  Roithner | diode |
QL8 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | QL8025 | LOW POWER FPGA COMBINING PERFORMANCE DENSITY AND EMBEDED RAM (FOLSVH,, )DPLO\ 'DWD 6KHHW
/RZ 3RZHU )3*$ &RPELQLQJ 3HUIRUPDQFH 'HQVLW\ DQG (PEHGGHG 5$0
'HYLFH +LJKOLJKWV
)OH[LEOH 3URJUDPPDEOH /RJLF
0.18 µ, six layer metal CMOS process 1.8 V Vcc, 1.8/2.5/3.3 V drive capable I/O Up to 4,008 dedicated flip-flops Up to 55.3 K embedded  ETC data | | |
| 2 | QL8050 | LOW POWER FPGA COMBINING PERFORMANCE DENSITY AND EMBEDED RAM (FOLSVH,, )DPLO\ 'DWD 6KHHW
/RZ 3RZHU )3*$ &RPELQLQJ 3HUIRUPDQFH 'HQVLW\ DQG (PEHGGHG 5$0
'HYLFH +LJKOLJKWV
)OH[LEOH 3URJUDPPDEOH /RJLF
0.18 µ, six layer metal CMOS process 1.8 V Vcc, 1.8/2.5/3.3 V drive capable I/O Up to 4,008 dedicated flip-flops Up to 55.3 K embedded ETC data | | |
| 3 | QL8150 | LOW POWER FPGA COMBINING PERFORMANCE DENSITY AND EMBEDED RAM (FOLSVH,, )DPLO\ 'DWD 6KHHW
/RZ 3RZHU )3*$ &RPELQLQJ 3HUIRUPDQFH 'HQVLW\ DQG (PEHGGHG 5$0
'HYLFH +LJKOLJKWV
)OH[LEOH 3URJUDPPDEOH /RJLF
0.18 µ, six layer metal CMOS process 1.8 V Vcc, 1.8/2.5/3.3 V drive capable I/O Up to 4,008 dedicated flip-flops Up to 55.3 K embedded ETC data | | |
| 4 | QL8250 | LOW POWER FPGA COMBINING PERFORMANCE DENSITY AND EMBEDED RAM (FOLSVH,, )DPLO\ 'DWD 6KHHW
/RZ 3RZHU )3*$ &RPELQLQJ 3HUIRUPDQFH 'HQVLW\ DQG (PEHGGHG 5$0
'HYLFH +LJKOLJKWV
)OH[LEOH 3URJUDPPDEOH /RJLF
0.18 µ, six layer metal CMOS process 1.8 V Vcc, 1.8/2.5/3.3 V drive capable I/O Up to 4,008 dedicated flip-flops Up to 55.3 K embedded ETC data | | |
| 5 | QL8325 | LOW POWER FPGA COMBINING PERFORMANCE DENSITY AND EMBEDED RAM (FOLSVH,, )DPLO\ 'DWD 6KHHW
/RZ 3RZHU )3*$ &RPELQLQJ 3HUIRUPDQFH 'HQVLW\ DQG (PEHGGHG 5$0
'HYLFH +LJKOLJKWV
)OH[LEOH 3URJUDPPDEOH /RJLF
0.18 µ, six layer metal CMOS process 1.8 V Vcc, 1.8/2.5/3.3 V drive capable I/O Up to 4,008 dedicated flip-flops Up to 55.3 K embedded ETC data | | |
| 6 | QL83I6S-A | LASER DIODE QSI LASER DIODE SPECIFICATIONS FOR APPROVAL
Customer :
Model : QL83I6S-A/B/C
Signature of Approval
Approved by Checked by Issued by
Approval by Customer
TENTATIVE
315-9, Cheonheung-ri, Sungger-eup, Cheonan-city, Chungnam, Korea 330-836
WWW.QSILaser.com
QL83I6S-A/B/C
AlGaAs Laser Diode
Quantum S  QSI diode | | |
| 7 | QL83I6S-B | LASER DIODE QSI LASER DIODE SPECIFICATIONS FOR APPROVAL
Customer :
Model : QL83I6S-A/B/C
Signature of Approval
Approved by Checked by Issued by
Approval by Customer
TENTATIVE
315-9, Cheonheung-ri, Sungger-eup, Cheonan-city, Chungnam, Korea 330-836
WWW.QSILaser.com
QL83I6S-A/B/C
AlGaAs Laser Diode
Quantum S QSI diode | |
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