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Datasheet R601 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | R601 | General Purpose Rectifier (200-300 Amperes Average 1400-2600 Volts) | Powerex Power Semiconductors | rectifier |
2 | R601 | Coil Filters 137
CHIP INDUCTOR
COIL FILTERS
R601/R602/R332/WF1608/WF2012SERIES
COIL FILTERS
R601/R602/R332/WF1608/WF2012SERIES
138
| Okaya | filter |
3 | R6010ANX | Drive Nch MOSFET Data Sheet
10V Drive Nch MOSFET
R6010ANX
Structure Silicon N-channel MOSFET Dimensions (Unit : mm)
TO-220FM
10.0
φ3.2
4.5 2.8
Features 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V. 4) Drive circuits can be simple. 5) Parallel use | ROHM Semiconductor | mosfet |
4 | R6010MND3 | MOSFET, Transistor R6010MND3
Nch 600V 10A Power MOSFET
Datasheet
VDSS
600V
lOutline
RDS(on)(Max.)
0.380Ω
ID
±10A
TO-252
PD
143W
lFeatures
1) Fast reverse recovery time (trr). 2) Low on-resistance. 3) Fast switching speed. 4) Gate-source voltage (VGSS) guaranteed | ROHM Semiconductor | mosfet |
5 | R6012ANJ | Drive Nch MOSFET 10V Drive Nch MOSFET
R6012ANJ
zStructure Silicon N-channel MOSFET zDimensions (Unit : mm)
LPTS
10.1 4.5 1.3
zFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V. 4) Drive circuits can be simple. 5) Parallel use is easy.
7.25
13.1
3.0
1.0
| ROHM Semiconductor | mosfet |
R60 Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | R600 | General Purpose Rectifier (200-300 Amperes Average 1400-2600 Volts) Powerex Power Semiconductors rectifier | | |
2 | R6000F | 0.2mA Fast Recovery High Voltage Rectifier 3500 - 6000 Volts MCC
Features
• • • • AVALANCHE OPERATION UL 94V0 FLAME RETARDANT EPOXY MOLDING COMPOND BEVELED ROUND CHIP LOW COST
R3500F THRU R6000F
0.2mA Fast Recovery High Voltage Rectifier 3500 - 6000 Volts
DO-15
Maximum DC Blocking Voltage
D
• •
Maximum Ratings
Operating Temperature -55 °C to + Micro Commercial Components rectifier | | |
3 | R6004CND | 10V Drive Nch MOSFET Data Sheet
10V Drive Nch MOSFET
R6004CND
Structure Silicon N-channel MOSFET
Features 1) Low on-resistance. 2) High-speed switching. 3) Wide SOA. 4) Drive circuits can be simple. 5) Parallel use is easy.
Dimensions (Unit : mm)
CPT3
(SC-63) ROHM Semiconductor mosfet | | |
4 | R6004END | Nch 600V 4A Power MOSFET R6004END
Nch 600V 4A Power MOSFET
Datasheet
VDSS
600V
lOutline
TO-252
RDS(on)(Max.)
0.98Ω
SC-63
ID
±4.0A
CPT3
PD
lFeatures
58W
lInner circuit
1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be � ROHM Semiconductor mosfet | | |
5 | R6004ENX | Nch 600V 4A Power MOSFET R6004ENX
Nch 600V 4A Power MOSFET
Data Sheet
VDSS RDS(on) (Max.)
ID PD
lFeatures 1) Low on-resistance.
600V 980mW
4A 40W
lOutline
TO-220FM
lInner circuit
(1) (2) (3)
2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 20V. 4) Drive circuits can be simple. 5) Parallel us ROHM Semiconductor mosfet | | |
6 | R6004KND | Nch 600V 4A Power MOSFET R6004KND
Nch 600V 4A Power MOSFET
VDSS RDS(on)(Max.)
ID PD
600V 0.98Ω ±4.0A 58W
lFeatures
1) Low on-resistance. 2) Ultra fast switching speed. 3) Parallel use is easy. 4) Pb-free lead plating ; RoHS compliant.
lOutline
TO-252
SC-63
CPT3
lInner circuit
Datas ROHM Semiconductor mosfet | | |
7 | R6004KNJ | Nch 600V 4A Power MOSFET R6004KNJ
Nch 600V 4A Power MOSFET
VDSS RDS(on)(Max.)
ID PD
600V 0.98Ω ±4.0A 58W
lFeatures
1) Low on-resistance. 2) Ultra fast switching speed. 3) Parallel use is easy. 4) Pb-free lead plating ; RoHS compliant
lOutline
TO-263
SC-83
LPT(S)
lInner circuit
Data ROHM Semiconductor mosfet | |
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Número de pieza | Descripción | Fabricantes | |
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