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Datasheet RJP020N06FRA Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | RJP020N06FRA | Power MOSFET, Transistor RJP020N06FRA
Nch 60V 2A Middle Power MOSFET
VDSS RDS(on)(Max.)
ID PD
60V 240mΩ
±2A 2W
lFeatures
1) Low on-resistance 2) Low voltage drive(2.5V drive) 3) AEC-Q101 Qualified
lOutline
SOT-89
MPT3
lInner circuit
Datasheet
lPackaging specifications Pack |  ROHM Semiconductor | mosfet |
RJP Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | RJP020N06 | Drive Nch MOS FET
RJP020N06
Transistors
2.5V Drive Nch MOS FET
RJP020N06
zStructure Silicon N-channel MOS FET zExternal dimensions (Unit : mm)
MPT3
4.5 1.6
0.5
1.5
zFeatures 1) Low On-resistance. 2) Low voltage drive (2.5V drive).
(1)
(2)
(3)
1.0
2.5 4.0
0.4
0.4 1.5
0.5 1.5 3.0
0.4
ROHM Semiconductor data | | |
| 2 | RJP020N06FRA | Power MOSFET, Transistor RJP020N06FRA
Nch 60V 2A Middle Power MOSFET
VDSS RDS(on)(Max.)
ID PD
60V 240mΩ
±2A 2W
lFeatures
1) Low on-resistance 2) Low voltage drive(2.5V drive) 3) AEC-Q101 Qualified
lOutline
SOT-89
MPT3
lInner circuit
Datasheet
lPackaging specifications Pack ROHM Semiconductor mosfet | | |
| 3 | RJP1CS03DWA | IGBT, Insulated Gate Bipolar Transistor Preliminary Datasheet
RJP1CS03DWT/RJP1CS03DWA
1250V - 30A - IGBT Application: Inverter
Features
Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25C) High speed switching Short circuit withstands time (10 s min.) R07DS0826EJ0001 Rev  Renesas igbt | | |
| 4 | RJP1CS03DWT | IGBT, Insulated Gate Bipolar Transistor Preliminary Datasheet
RJP1CS03DWT/RJP1CS03DWA
1250V - 30A - IGBT Application: Inverter
Features
Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25C) High speed switching Short circuit withstands time (10 s min.) R07DS0826EJ0001 Rev Renesas igbt | | |
| 5 | RJP1CS04DWA | IGBT, Insulated Gate Bipolar Transistor Preliminary Datasheet
RJP1CS04DWT/RJP1CS04DWA
1250V - 50A - IGBT Application: Inverter
Features
Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25C) High speed switching Short circuit withstands time (10 s min.) R07DS0827EJ0004 Rev Renesas igbt | | |
| 6 | RJP1CS04DWT | IGBT, Insulated Gate Bipolar Transistor Preliminary Datasheet
RJP1CS04DWT/RJP1CS04DWA
1250V - 50A - IGBT Application: Inverter
Features
Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25C) High speed switching Short circuit withstands time (10 s min.) R07DS0827EJ0004 Rev Renesas igbt | | |
| 7 | RJP1CS05DWA | IGBT, Insulated Gate Bipolar Transistor Preliminary Datasheet
RJP1CS05DWT/RJP1CS05DWA
1250V - 75A - IGBT Application: Inverter
Features
Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 75 A, VGE = 15 V, Ta = 25C) High speed switching Short circuit withstands time (10 s min.) R07DS0828EJ0001 Rev Renesas igbt | |
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