Datasheet RJP60V0DPM-80 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	RJP60V0DPM-80	IGBT RJP60V0DPM-80 600V - 22A - IGBT Application: Inverter Features • High breakdown-voltage • Low collector to emitter saturation voltage VCE(sat) = 1.5 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C) • Short circuit withstand time (6 μs typ.) • Trench gate and thin wafer technology (G6H series)	Renesas

RJP60V0DPM Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
RJP60V0DPM	N-Channel IGBT Preliminary Datasheet RJP60V0DPM 600V - 22A - IGBT Application: Inverter Features  High breakdown-voltage  Low Collector to Emitter saturation Voltage VCE(sat) = 1.5 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C)  Short circuit withstand time (6 s typ.)  Trench gat	Renesas
RJP60V0DPM-80	IGBT RJP60V0DPM-80 600V - 22A - IGBT Application: Inverter Features • High breakdown-voltage • Low collector to emitter saturation voltage VCE(sat) = 1.5 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C) • Short circuit withstand time (6 μs typ.) • Trench gate and thin wafer tech	Renesas

Esta página es del resultado de búsqueda del RJP60V0DPM-80. Si pulsa el resultado de búsqueda de RJP60V0DPM-80 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin.

Enlace url :

[1]

nuevas actualizaciones

Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap