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Datasheet RSJ650N10 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | RSJ650N10 | MOSFET, Transistor Data Sheet
4V Drive Nch MOSFET
RSJ650N10
Structure Silicon N-channel MOSFET
Features 1) Low on-resistance. 2) High power package. 3) 4V drive.
Dimensions (Unit : mm)
LPTS
10.1 4.5 1.3
13.1 9.0
1.0
3.0
1.24
2.54 0.78 5.08
(1) (2) (3)
0.4 2.7
1.2
Application Switching
Pac |  ROHM Semiconductor | mosfet |
| 2 | RSJ650N10FRA | MOSFET, Transistor 4V Drive Nch MOSFET
RSJ650N10 FRA
z Structure Silicon N-channel MOSFET
zFeatures 1) Low on-resistance. 2) High power package. 3) 4V drive.
Data Sheet
AEC-Q101 Qualified
z Dimensions (Unit : mm)
LPTS
10.1 4.5 1.3
13.1 9.0
1.0
3.0
1.24
2.54 0.78 5.08
(1) (2) (3)
0.4 2.7
1.2
z Application Swi | ROHM Semiconductor | mosfet |
RSJ Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | RSJ250P10 | MOSFET, Transistor Data Sheet
4V Drive Pch MOSFET
RSJ250P10
Structure Silicon P-channel MOSFET
Features 1) Low on-resistance. 2) Built-in G-S Protection Diode.
Application Switching
Dimensions (Unit : mm)
LPTS
10.1 4.5 1.3
13.1 9.0
1.0
3.0
1.24
2.54 0.78 5.08
(1) (2) (3)
0.4 2.7
1.2
Packag ROHM Semiconductor mosfet | | |
| 2 | RSJ250P10FRA | MOSFET, Transistor 4V Drive Pch MOSFET
RSJ250P10FRA
z Structure Silicon P-channel MOSFET
zFeatures 1) Low on-resistance. 2) Built-in G-S Protection Diode.
z Application Switching
Data Sheet
AEC-Q101 Qualified
z Dimensions (Unit : mm)
LPTS
10.1 4.5 1.3
13.1 9.0
1.0
3.0
1.24
2.54 0.78 5.08
(1) (2) (3)
0.4 2.7
1 ROHM Semiconductor mosfet | | |
| 3 | RSJ400N06 | MOSFET, Transistor 10V Drive Nch MOSFET
RSJ400N06
Structure Silicon N-channel MOSFET
Features 1) Low on-resistance. 2) High current 3) High power Package
Application Switching
Packaging specifications
Package Type Code
Basic ordering unit (pieces) RSJ400N06
Taping TL
1000
Data Sheet
1.2
D ROHM Semiconductor mosfet | | |
| 4 | RSJ400N06FRA | MOSFET, Transistor 10V Drive Nch MOSFET
RRSSJJ440000NN0066FRA
Structure Silicon N-channel MOSFET
Features 1) Low on-resistance. 2) High current 3) High power Package
Application Switching
Packaging specifications
Package Type Code
Basic ordering unit (pieces) RRSSJJ4400N0N060F6RA
Taping
TL
1000
ROHM Semiconductor mosfet | | |
| 5 | RSJ400N10FRA | MOSFET, Transistor RSJ400N10FRA
Nch 100V 40A Power MOSFET
Datasheet
VDSS RDS(on) (Max.)
ID PD
100V 27m 40A 50W
Outline
LPTS (SC-83)
AEC-Q102 Qualified
(2)
(1) (3)
Features 1) Low on-resistance. 2) Fast switching speed. 3) Drive circuits can be simple. 4) Parallel use is easy. 5) Pb-free lead plating ; R ROHM Semiconductor mosfet | | |
| 6 | RSJ450N04 | MOSFET, Transistor 10V Drive Nch MOSFET
RSJ450N04
Structure Silicon N-channel MOSFET
Features 1) Low on-resistance. 2) High current 3) High power Package
Application Switching
Packaging specifications
Package Type Code
Basic ordering unit (pieces) RSJ450N04
Taping TL
1000 ○
Data Sheet
1.2
D ROHM Semiconductor mosfet | | |
| 7 | RSJ451N04FRA | MOSFET, Transistor RSJ451N04FRA
Nch 40V 45A Power MOSFET
Datasheet
VDSS RDS(on)(Max.)
ID PD
40V 13.5mΩ
±45A 50W
lFeatures
1) Low on-resistance. 2) Fast switching speed. 3) High power small mold package 4) Pb-free lead plating ; RoHS compliant. 5) AEC-Q101 Qualified
lOutline
TO-263
SC-83
LPT(S)
ROHM Semiconductor mosfet | |
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