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Datasheet RURP8100 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | RURP8100 | 8A/ 1000V Ultrafast Diodes MUR8100E, RURP8100
Data Sheet December 2002
8A, 1000V Ultrafast Diodes
The MUR8100E and RUR8100 are ultrafast diodes (trr < 75ns) with soft recovery characteristics. They have a low forward voltage drop and are of planar, silicon nitride passivated, ion-implanted, epitaxial construction. These devi |
 Fairchild Semiconductor |
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| 3 | RURP8100 | 8A/ 1000V Ultrafast Diodes MUR8100E, RURP8100
Data Sheet January 2000 File Number 2780.4
8A, 1000V Ultrafast Diodes
The MUR8100E and RUR8100 are ultrafast diodes (trr < 75ns) with soft recovery characteristics. They have a low forward voltage drop and are of planar, silicon nitride passivated, ion-implanted, epitaxial constr |
 Intersil Corporation |
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| 2 | RURP8100 | 700V - 1000V Ultrafast Diodes S E M I C O N D U C T O R
MUR870E, MUR880E, MUR890E, MUR8100E, RURP870, RURP880, RURP890, RURP8100
8A, 700V - 1000V Ultrafast Diodes
Package
JEDEC TO-220AC
ANODE CATHODE CATHODE (FLANGE)
April 1995
Features
• Ultrafast with Soft Recovery Characteristic (tRR < 75ns) • +175 C Rated Junction Tem |
 Harris |
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| 1 | RURP8100CC | 8A/ 1000V Ultrafast Dual Diode RURP8100CC
Data Sheet January 2000 File Number 4021.1
8A, 1000V Ultrafast Dual Diode
The RURP8100CC is an ultrafast dual diode with soft recovery characteristics (trr < 85ns). It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial planar construction. This devi |
Intersil Corporation |
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