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Datasheet S9015LT1 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | S9015LT1 | PNP Epitaxial Silicon Transistor S9015LT1 PNP Epitaxial Silicon Transistor
LOW FREQUENCY, LOW NOISE AMPLIFIER
SOT-23
Collector-Emitter Voltage: VCEO= -45V Collector Dissipation: PC=200mW
Absolute Maximum Ratings (TA=25oC)
Characteristic
Symbol Rating Unit
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage |
 Elite |
 |
| 2 | S9015LT1 | PNP Transistor Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors
S9015LT1 TRANSISTOR (PNP)
FEATURES
Power dissipation
PCM: 0.2 W (Tamb=25℃)
Collector current
ICM: -0.1 Collector-base voltage
A
V(BR)CBO:
-50 V
Operating and storage junction temperature range
TJ, |
 Tuofeng Semiconductor |
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| 1 | S9015LT1 | PNP General purpose Transistors S9015LT1
PNP
1 2 3
SOT-23
Value -45 -50 -5 -100
V CEO
200 1.6 625
S9015=M6
-0.1 -100 -100
-45 -40 -5.0 O -0.1 -0.1 -0.1
u
E=-45Vdc, I E= 0 ) -50 -5.0
u u
WEITRON
http://www.weitron.com.tw
S9015LT1
ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) |
 Weitron Technology |
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