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Datasheet SGS5N150 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | SGS5N150 | General Description SGS5N150UF
IGBT
SGS5N150UF
General Description
Fairchild’s Insulated Gate Bipolar Transistor (IGBT) provides low conduction and switching losses. SGS5N150UF is designed for the Switching Power Supply applications.
Features
• High Speed Switching • Low Saturation Voltage : VCE(sat) = 4.7 V @ |
 Fairchild Semiconductor |
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| 1 | SGS5N150UF | General Description SGS5N150UF
IGBT
SGS5N150UF
General Description
Fairchild’s Insulated Gate Bipolar Transistor (IGBT) provides low conduction and switching losses. SGS5N150UF is designed for the Switching Power Supply applications.
Features
• High Speed Switching • Low Saturation Voltage : VCE(sat) = 4.7 V @ |
Fairchild Semiconductor |
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