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Datasheet SKIIP22NAB12I Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | SKiiP22NAB12I | 3-phase bridge rectifier + braking chopper + 3-phase bridge inverter SKiiP 22 NAB 12 - SKiiP 22 NAB 12 I
Absolute Maximum Ratings
Symbol Conditions 1)
Inverter & Chopper
VCES VGES IC ICM IF = –IC IFM = –ICM
Theatsink = 25 / 80 °C tp < 1 ms; Theatsink = 25 / 80 °C Theatsink = 25 / 80 °C tp < 1 ms; Theatsink = 25 / 80 °C
Bridge Rectifier
VRRM
ID
IFSM I2t
|  Semikron International | rectifier |
| 2 | SKIIP22NAB12IT1 | 3-phase bridge rectifier + brake chopper + 3-phase bridge inverter 6.LL3 1$% 7 6.LL3 1$% , 7
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7M 7VWJ 9LVRO | Semikron International | rectifier |
SKI Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | SKI-FF530 | Infrared emitting diode which mounted high power 850 nm IR CHIP
1.0
Ta = 25 Relative luminous intensity ( % )
0.8
0.6
0.4
0.2
0.0 730 770 810 850 890 930 970
Wavelength λ ( nm )
2
 ETC diode | | |
| 2 | SKI03021 | N-channel Trench Power MOSFET 30 V, 85 A, 2.1 mΩ Low RDS(ON) N ch Trench Power MOSFET
SKI03021
Features
V(BR)DSS --------------------------------- 30 V (ID = 100 µA) ID ---------------------------------------------------------- 85 A RDS(ON) ----------- 2.6 mΩ max. (VGS = 10 V, ID = 110A) Qg------ 42.3 nC (VGS  Sanken mosfet | | |
| 3 | SKI03036 | N-channel Trench Power MOSFET 30 V, 80 A, 3.2 mΩ Low RDS(ON) N ch Trench Power MOSFET
SKI03036
Features
V(BR)DSS --------------------------------- 30 V (ID = 100 µA) ID ---------------------------------------------------------- 80 A RDS(ON) ----------3.9 mΩ max. (VGS = 10 V, ID = 57.0 A) Qg------16.5 nC (VGS Sanken mosfet | | |
| 4 | SKI03063 | N-channel Trench Power MOSFET 30 V, 40 A, 5.5 mΩ Low RDS(ON) N ch Trench Power MOSFET
SKI03063
Features
V(BR)DSS --------------------------------- 30 V (ID = 100 µA) ID ---------------------------------------------------------- 40 A RDS(ON) ----------6.8 mΩ max. (VGS = 10 V, ID = 39.5 A) Qg------- 9.3 nC (VGS Sanken mosfet | | |
| 5 | SKI03087 | N-channel Trench Power MOSFET 30 V, 40 A, 7.6 mΩ Low RDS(ON) N ch Trench Power MOSFET
SKI03087
Features
V(BR)DSS --------------------------------- 30 V (ID = 100 µA) ID ---------------------------------------------------------- 40 A RDS(ON) ----------9.4 mΩ max. (VGS = 10 V, ID = 31.5 A) Qg------- 7.1 nC (VGS Sanken mosfet | | |
| 6 | SKI04024 | N-channel Trench Power MOSFET 40 V, 85 A, 2.6 mΩ Low RDS(ON) N ch Trench Power MOSFET
SKI04024
Features
V(BR)DSS --------------------------------- 40 V (ID = 100 µA) ID ---------------------------------------------------------- 85 A RDS(ON) ----------3.2 mΩ max. (VGS = 10 V, ID = 82.5 A) Qg------44.9 nC (VGS Sanken mosfet | | |
| 7 | SKI04033 | N-channel Trench Power MOSFET 40 V, 80 A, 3.1 mΩ Low RDS(ON) N ch Trench Power MOSFET
SKI04033
Features
V(BR)DSS --------------------------------- 40 V (ID = 100 µA) ID ---------------------------------------------------------- 80 A RDS(ON) ----------3.9 mΩ max. (VGS = 10 V, ID = 58.5 A) Qg------26.4 nC (VGS Sanken mosfet | |
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nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
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