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Datasheet SMBT3906 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 5 | SMBT3906 | PNP Silicon Switching Transistor SMBT3906/ MMBT3906
PNP Silicon Switching Transistor • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • Complementary type: SMBT3904/ MMBT3904 (NPN)
3
2 1
VPS05161
Type SMBT3906/ MMBT3906
Maximum Ratings Parameter Collector-emitter voltage Collector-base vo |
 Infineon Technologies AG |
 |
| 4 | SMBT3906DW1 | Dual General Purpose Transistor MBT3906DW1, SMBT3906DW1 Dual General Purpose Transistor
The MBT3906DW1 device is a spin −off of our popular SOT−23/SOT−323 three −leaded device. It is designed for general purpose amplifier applications and is housed in the SOT −363 six−leaded surface mount package. By putting two discre |
 ON Semiconductor |
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| 3 | SMBT3906S | PNP Silicon Switching Transistor Array SMBT 3906S
PNP Silicon Switching Transistor Array • High DC current gain: 0.1mA to 100mA • Low collector-emitter saturation voltage • Two ( galvanic) internal isolated Transistors with high matching in one package • Complementary type: SMBT 3904S (NPN)
4 5 6
2 1
3
VPS05604
Type SMBT 3906 |
 Siemens Semiconductor Group |
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| 2 | SMBT3906S | PNP Silicon Switching Transistor Array SMBT3906S
PNP Silicon Switching Transistor Array
High DC current gain: 0.1mA to 100mA Low collector-emitter saturation voltage Two ( galvanic) internal isolated Transistors
4 5 6
with good matching in one package
Complementary type: SMBT3904S (NPN)
2 1
C1 6 B2 5 E2 4
3
VPS05604
TR2 TR1 |
Infineon Technologies AG |
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