Datasheet SMBT3906DW1 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	SMBT3906DW1	Dual General Purpose Transistor MBT3906DW1, SMBT3906DW1 Dual General Purpose Transistor The MBT3906DW1 device is a spin −off of our popular SOT−23/SOT−323 three −leaded device. It is designed for general purpose amplifier applications and is housed in the SOT −363 six−leaded surface mount package. By putting two discre	ON Semiconductor

SMBT3906 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
SMBT3906S	PNP Silicon Switching Transistor Array SMBT3906S PNP Silicon Switching Transistor Array High DC current gain: 0.1mA to 100mA Low collector-emitter saturation voltage Two ( galvanic) internal isolated Transistors 4 5 6 with good matching in one package Complementary type: SMBT3904S (NPN) 2 1 C1 6 B2 5 E2 4	Infineon Technologies AG
SMBT3906DW1	Dual General Purpose Transistor MBT3906DW1, SMBT3906DW1 Dual General Purpose Transistor The MBT3906DW1 device is a spin −off of our popular SOT−23/SOT−323 three −leaded device. It is designed for general purpose amplifier applications and is housed in the SOT −363 six−leaded surface mount package. B	ON Semiconductor
SMBT3906	PNP Silicon Switching Transistor SMBT3906/ MMBT3906 PNP Silicon Switching Transistor • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • Complementary type: SMBT3904/ MMBT3904 (NPN) 3 2 1 VPS05161 Type SMBT3906/ MMBT3906 Maximum Ratings Parameter Collector-emitter volta	Infineon Technologies AG

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Número de pieza	Descripción	Fabricantes	PDF
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