Datasheet SNN0630Q Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	SNN0630Q	Advanced N-Ch Trench MOSFET SNN0630Q Advanced N-Ch Trench MOSFET Portable Equipment Application Features  Low On-state resistance: 28m at VGS = 10V, ID = 2.9A  Low gate charge: Qg= 4.5nC (Typ.)  High performance trench technology for extremely low RDS(on)  100% avalanche tested  Halogen free and RoHS compli	KODENSHI KOREA

SNN06 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
SNN0630Q	Advanced N-Ch Trench MOSFET SNN0630Q Advanced N-Ch Trench MOSFET Portable Equipment Application Features  Low On-state resistance: 28m at VGS = 10V, ID = 2.9A  Low gate charge: Qg= 4.5nC (Typ.)  High performance trench technology for extremely low RDS(on)  100% avalanche tested  Halogen	KODENSHI KOREA

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Número de pieza	Descripción	Fabricantes	PDF
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