Datasheet SSF3612E Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	SSF3612E	N-Channel MOSFET DESCRIPTION The SSF3612E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.4V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch, facil	GOOD-ARK

SSF36 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
SSF3617	P-Channel MOSFET SSF3617 30V P-Channel MOSFET DESCRIPTION The SSF3617 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES ● VDS =-30V,ID =-10A RDS(ON) < 35mΩ @ VGS=-4.5V RDS	GOOD-ARK
SSF3604	MOSFET ( Transistor ) SSF3604 DESCRIPTION The SSF3604 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. GENERAL FEATURES ● VDS = 3	Silikron Semiconductor
SSF3616	30V N-Channel MOSFET DESCRIPTION The SSF3616 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES ● VDS = 30V,ID =9A RDS(ON) < 30mΩ @ VGS=4.5V RDS(ON) < 18.5mΩ @ VGS=10V ● High	GOOD-ARK

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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