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Datasheet SSF6010G Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 SSF6010G   N-Channel MOSFET

Main Product Characteristics VDSS 60V RDS(on) 8.3mΩ (typ.) ID 64A ① Features and Benefits TO-251  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reve
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datasheet SSF6010G pdf

SSF60 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
SSF6014

MOSFET ( Transistor )

SSF6014 Feathers: „ „ „ Advanced trench process technology avalanche energy, 100% test Fully characterized avalanche voltage and current ID =60A BV=60V Rdson=14mΩ (max.) Description: The SSF6014 is a new generation of middle voltage and high current
Silikron Semiconductor Co
Silikron Semiconductor Co
datasheet pdf - Silikron Semiconductor Co
SSF6010

Power switching application

SSF6010 Feathers: „ „ „ Advanced trench process technology avalanche energy, 100% test Fully characterized avalanche voltage and current ID =60A BV=60V Rdson=10mohm Description: The SSF6010 is a new generation of middle voltage and high current N–Channel
Silikron Semiconductor Co
Silikron Semiconductor Co
datasheet pdf - Silikron Semiconductor Co
SSF6010A

60V N-Channel MOSFET

SSF6010A 60V N-Channel MOSFET FEATURES  Advanced trench process technology  avalanche energy, 100% test  Fully characterized avalanche voltage and current  Lead free product ID =75A BV=60V R DS (ON)=8mΩ (typ.) DESCRIPTION The SSF6010A is a new generation of middle
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datasheet pdf - GOOD-ARK


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SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

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