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SSP4N60 데이터시트 PDF ( Data sheet )

번호 부품번호 상세설명 및 전자부품 기능 제조사 PDF
4 SSP4N60   (SSP4N55 / SSP4N60) N-Channel Power MOSFET

Samsung Electronics
Samsung Electronics
pdf 데이터시트
3 SSP4N60AS   Advanced Power MOFET

Samsung Electronics
Samsung Electronics
pdf 데이터시트
2 SSP4N60AS   Advanced Power MOFET

Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µ A (Max.) @ VDS = 600V Lower RDS(ON) : 2.037 Ω (Typ.) SSP4N60AS BV

Fairchild Semiconductor
Fairchild Semiconductor
pdf 데이터시트
1 SSP4N60B   600V N-Channel MOSFET

SSP4N60B/SSS4N60B SSP4N60B/SSS4N60B 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially t

Fairchild Semiconductor
Fairchild Semiconductor
pdf 데이터시트


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