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SSP4N60 데이터시트 PDF ( Data sheet ) |
| 번호 | 부품번호 | 상세설명 및 전자부품 기능 | 제조사 | |
| 4 | SSP4N60 | (SSP4N55 / SSP4N60) N-Channel Power MOSFET
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 Samsung Electronics |
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| 3 | SSP4N60AS | Advanced Power MOFET |
Samsung Electronics |
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| 2 | SSP4N60AS | Advanced Power MOFET Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µ A (Max.) @ VDS = 600V Lower RDS(ON) : 2.037 Ω (Typ.) SSP4N60AS BV |
 Fairchild Semiconductor |
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| 1 | SSP4N60B | 600V N-Channel MOSFET SSP4N60B/SSS4N60B SSP4N60B/SSS4N60B 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially t |
Fairchild Semiconductor |
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DataSheet.kr | 2020 | 연락처 | 링크모음 | 신규 | 사이트맵 : 1, 2 |