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Datasheet SSTS20100 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 6 | SSTS20100 | Schottky Barrier Rectifier ( Diode )
SSTS20100/SSTS20100F
Main Product Characteristics:
IF VRRM Tj(max) Vf(max)
20A 100V 150℃ 0.85V
Features and Benefits:
High Ju |
 Silikron Semiconductor |
 |
| 5 | SSTS20100D | Schottky Barrier Rectifier ( Diode ) SSTS20100D
Main Product Characteristics:
IF VRRM Tj(max) Vf(max)
20A 100V 150℃ 0.85V
Features and Benefits:
High Junction Temperature High ESD Protection High Forward & Reverse Surge capability
TO252 SSTS20100D
Schematic Diagram
Description:
Schottky Barrier Rectifier designed f |
Silikron Semiconductor |
|
| 4 | SSTS20100F | Schottky Barrier Rectifier ( Diode )
SSTS20100/SSTS20100F
Main Product Characteristics:
IF VRRM Tj(max) Vf(max)
20A 100V 150℃ 0.85V
Features and Benefits:
High Ju |
Silikron Semiconductor |
|
| 3 | SSTS20100I | Schottky Barrier Rectifier ( Diode ) SSTS20100I
Main Product Characteristics:
IF VRRM Tj(max) Vf(max)
20A 100V 150℃ 0.85V
Features and Benefits:
High Junction Temperature High ESD Protection High Forward & Reverse Surge capability
TO251 SSTS20100I
Schematic Diagram
Description:
Schottky Barrier Rectifier designed f |
Silikron Semiconductor |
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