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Datasheet SSU2N60B Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | SSU2N60B | 600V N-Channel MOSFET SSR2N60B / SSU2N60B
November 2001
SSR2N60B / SSU2N60B
600V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize o |  Fairchild Semiconductor | mosfet |
SSU Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | SSU04N65 | N-Ch Enhancement Mode Power MOSFET SSU04N65
Elektronische Bauelemente 4A , 650V , RDS(ON) 2.6Ω N-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product A suffix of “-C” specifies halogen free
DESCRIPTION
The SSU04N65 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(on  SeCoS Halbleitertechnologie mosfet | | |
| 2 | SSU07N65SL | N-Ch Enhancement Mode Power MOSFET SSU07N65SL
Elektronische Bauelemente 7A , 650V , RDS(ON) 1.4Ω N-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product A suffix of “-C” specifies halogen free
DESCRIPTION
The SSU07N65SL is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RD SeCoS Halbleitertechnologie mosfet | | |
| 3 | SSU1N50B | 520V N-Channel MOSFET SSR1N50B / SSU1N50B
SSR1N50B / SSU1N50B
520V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resista Fairchild Semiconductor mosfet | | |
| 4 | SSU1N60A | Advanced Power MOSFET
Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 600V Low RDS(ON) : 9.390 Ω (Typ.)
SSR/U1N60A
BVDSS = 600 V RDS(on) = Fairchild Semiconductor mosfet | | |
| 5 | SSU1N60B | 600V N-Channel MOSFET SSR1N60B / SSU1N60B
November 2001
SSR1N60B / SSU1N60B
600V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize o Fairchild Semiconductor mosfet | | |
| 6 | SSU2N60A | Advanced Power MOSFET Advanced Power MOSFET
SSR/U2N60A
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 600V Lower RDS(ON) : 3.892 Ω (Typ.)
BVDSS = 600 V RDS(on) = 5 Ω ID = 1.8 A Fairchild Semiconductor mosfet | | |
| 7 | SSU2N60B | 600V N-Channel MOSFET SSR2N60B / SSU2N60B
November 2001
SSR2N60B / SSU2N60B
600V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize o Fairchild Semiconductor mosfet | |
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