Datasheet SSW1N50B Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	SSW1N50B	520V N-Channel MOSFET SSW1N50B / SSI1N50B SSW1N50B / SSI1N50B 520V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resista	Fairchild Semiconductor

SSW1N Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
SSW1N60B	600V N-Channel MOSFET SSW1N60B / SSI1N60B November 2001 SSW1N60B / SSI1N60B 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially ta	Fairchild Semiconductor
SSW1N60A	Advanced Power MOSFET Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 600V Low RDS(ON) : 9.390 Ω (Typ.) SSW/I1N60A BVDSS = 600 V RDS(on) =	Fairchild Semiconductor
SSW1N50B	520V N-Channel MOSFET SSW1N50B / SSI1N50B SSW1N50B / SSI1N50B 520V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minim	Fairchild Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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