ST9435GP PDF Datasheet

ST9435GP P Channel Enhancement Mode MOSFET -15.0A DESCRIPTION ST9435GP is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These device is particularly suited for low voltage application, notebook computer power

P Channel Enhancement Mode MOSFET - 5.6A DESCRIPTION ST9435A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.

Shenzhen Tuofeng Semiconductor Technology Co., Ltd 9435 P-Channel Enhancement Mode MOSFET Features Pin Description • -30V/-5.3A, RDS(ON) = 60mΩ(typ.) @ VGS = -10V RDS(ON) = 90mΩ(typ.) @ VGS = -4.5V • Super High Density Cell Design • Reliable and Rugged • SO-8 Pack

SSG9435BDY Elektronische Bauelemente -5.3 A, -30 V, RDS(ON) 36 mΩ P-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION The SSG9435BDY provide the designer with the best combination of fast switching, ruggedized devic

AP9435GH/J RoHS-compliant Product Advanced Power Electronics Corp. ▼ Low Gate Charge ▼ Simple Drive Requirement ▼ Fast Switching G S D P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -30V 50mΩ - 20A Description G Advanced Power MOSFETs utilized advanced proc

SSM9435GM P-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY BVDSS R DS(ON) ID DESCRIPTION The SSM9435GM acheives fast switching performance with low gate charge without a complex drive circuit. It is suitable for low voltage applications such as battery management and gene