Datasheet STD9N10-1 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	STD9N10-1	N-CHANNEL POWER MOS TRANSISTOR N-CHANNEL 100V - 0.23 Ω - 9A DPAK/IPAK POWER MOS TRANSISTOR Table 1. General Features Type STD9N10 STD9N10-1 VDSS 100 V 100 V RDS(on) < 0.27 Ω < 0.27 Ω ID 9A 9A STD9N10 STD9N10-1 Figure 1. Package FEATURES SUMMARY ■ TYPICAL RDS(on) = 0.23 Ω ■ ■ ■ ■ ■ ■	ST Microelectronics

STD9N1 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
STD9N10	N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR STD9N10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE ST D9N10 s s s s s s s s V DSS 100 V R DS(on) < 0.27 Ω ID 9 A s s TYPICAL RDS(on) = 0.23 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE C	ST Microelectronics
STD9N10L	N-CHANNEL POWER MOS TRANSISTOR STD9N10L N - CHANNEL 100V - 0.22Ω - 9A IPAK/DPAK POWER MOS TRANSISTOR TYPE STD9N10L s s s s s s s s V DSS 100 V R DS(on) < 0.27 Ω ID 9A s TYPICAL RDS(on) = 0.22 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC	ST Microelectronics
STD9N10-1	N-CHANNEL POWER MOS TRANSISTOR N-CHANNEL 100V - 0.23 Ω - 9A DPAK/IPAK POWER MOS TRANSISTOR Table 1. General Features Type STD9N10 STD9N10-1 VDSS 100 V 100 V RDS(on) < 0.27 Ω < 0.27 Ω ID 9A 9A STD9N10 STD9N10-1 Figure 1. Package FEATURES SUMMARY ■ TYPICAL RDS(on) = 0.23 Ω ■	ST Microelectronics

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Número de pieza	Descripción	Fabricantes	PDF
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