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Datasheet STP6506 Equivalent ( PDF )

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1 STP6506   Dual P Channel Enhancement Mode MOSFET

STP6506 Dual P Channel Enhancement Mode MOSFET -2.8A DESCRIPTION The STC6506 is the dual P-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and
Stanson Technology
Stanson Technology		 datasheet STP6506 pdf

STP6 Datasheet ( Hoja de datos ) - resultados coincidentes

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STP6NC60

N-CHANNEL Power MOSFET

N-CHANNEL 600V - 1Ω - 6A TO-220/TO-220FP/I2PAK PowerMESH™II MOSFET TYPE STP(B)6NC60(-1) STP6NC60FP s s s s s STP6NC60 - STP6NC60FP STB6NC60-1 VDSS 600 V 600 V RDS(on) < 1.2 Ω < 1.2 Ω ID 6A 6A 3 1 2 TYPICAL RDS(on) = 1.0 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALAN
 ST Microelectronics
ST Microelectronics		 datasheet pdf - ST Microelectronics
STP652F

N-Channel Logic Level Enhancement Mode Field Effect Transistor

Gre r Pro STP652F Ver 1.1 S a mHop Microelectronics C orp. N-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 60V ID 29A R DS(ON) (m Ω) Typ 22 @ VGS=10V FEATURES Super high dense cell design for extremely low RDS(ON). High power and curren
 SamHop
SamHop		 datasheet pdf - SamHop
STP60NF06

N-CHANNEL Power MOSFET

STP60NF06 N-channel 60V - 0.014Ω - 60A TO-220 STripFET II™ Power MOSFET General features Type STP60NF06 VDSS 60V RDS(on) <0.016Ω ID 60A ■ Exceptional dv/dt capability ■ 100% avalanche tested ■ Application oriented characterization Description This Power MOSFET
ST Microelectronics
ST Microelectronics		 datasheet pdf - ST Microelectronics


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SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

 Sanken
Sanken		 PDF


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