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Datasheet STP6NA60 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | STP6NA60 | N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR STP6NA60 STP6NA60FI
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
TYPE STP6NA60 STP6NA60FI
s s s s s s s
V DSS 600 V 600 V
R DS( on) < 1.2 Ω < 1.2 Ω
ID 6.5 A 3.9 A
TYPICAL RDS(on) = 1 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC L |
 ST Microelectronics |
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| 2 | STP6NA60FI | N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR STP6NA60 STP6NA60FI
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
TYPE STP6NA60 STP6NA60FI
s s s s s s s
V DSS 600 V 600 V
R DS( on) < 1.2 Ω < 1.2 Ω
ID 6.5 A 3.9 A
TYPICAL RDS(on) = 1 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC L |
ST Microelectronics |
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| 1 | STP6NA60FP | N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR STP6NA60FP
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
PRELIMINARY DATA TYPE STP6NA60F P
s s s s s s s
V DSS 600 V
R DS(on) < 1.2 Ω
ID 3.9 A
TYPICAL RDS(on) = 1 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANC |
ST Microelectronics |
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