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Datasheet STPSC806 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | STPSC806 | Schottky Barrier 600 V power Schottky silicon carbide diode
STPSC806
600 V power Schottky silicon carbide diode
Features
■ ■ ■
No or negligible reverse recovery Switching behavior independent of temperature Particularly suitable in PFC boost diode function
A K
Description
The SiC diode is an ultrahigh performance power Schottky d |
 ST Microelectronics |
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| 1 | STPSC806D | 600 V power Schottky silicon carbide diode
STPSC806D
600 V power Schottky silicon carbide diode
Features
■ ■ ■
No or negligible reverse recovery Switching behavior independent of temperature Particularly suitable in PFC boost diode function
A K
Description
The SiC diode is an ultrahigh performance power Schottky |
 STMicroelectronics |
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 Sanken |
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