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Datasheet SW830 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | SW830 | N-Channel MOSFET
SAMWIN
General Description Features
N-Channel MOSFET BVDSS (Minimum) RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ) : 500 V : 1.4 ohm : 5.0 A : 28 nc : 73 W
SW830
This power MOSFET is produced in CHMC with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET |
 SAMWIN |
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| 1 | SW830A | N-channel MOSFET SAMWIN
SW830A
N-channel MOSFET
Features
■ High ruggedness ■ RDS(ON) (Max 1.5 Ω)@VGS=10V ■ Gate Charge (Typ 19nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested
TO-220F
TO-220
BVDSS : 500V ID : 5.5A RDS(ON) : 1.5ohm
1
2
1 3
2
3
2
1. Gate 2. Drain 3. Source
General Descri |
SAMWIN |
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