Datasheet SWD1N60 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	SWD1N60	N-Channel MOSFET www.DataSheet.co.kr SAMWIN SW1N60 N-channel MOSFET BVDSS : 600V ID : 1.0A RDS(ON) : 12ohm 1 1 2 2 3 3 1 2 2 3 1 3 Features ■ High ruggedness ■ RDS(ON) (Max 12 Ω)@VGS=10V ■ Gate Charge (Max 6nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested TO-251 TO-252 TO-126 1. Gate 2. Dra	Samwin

SWD1 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
SWD1N60	N-Channel MOSFET Datasheet.es SAMWIN SW1N60 N-channel MOSFET BVDSS : 600V ID : 1.0A RDS(ON) : 12ohm 1 1 2 2 3 3 1 2 2 3 1 3 Features ■ High ruggedness ■ RDS(ON) (Max 12 Ω)@VGS=10V ■ Gate Charge (Max 6nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested TO-251 TO-252 TO	Samwin
SWD19N10	N-Channel MOSFET Datasheet.es SAMWIN SW19N10 N-channel MOSFET Features ■ High ruggedness ■ RDS(ON) (Max 0.1Ω)@VGS=10V ■ Gate Charge (Typ 100nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested TO-220 TO-252 BVDSS : 100V ID : 17A RDS(ON) : 0.1 ohm 1 1 2 3 2 3 2 1. Ga	Samwin
SWD100N03	N-Channel MOSFET Datasheet.es SAMWIN SW100N03 N-channel MOSFET Features ■ High ruggedness ■ RDS(ON) (Max 5.3mΩ)@VGS=10V ■ Gate Charge (Typ 146nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested 1 TO-220 TO-251 TO-252 TO-263 BVDSS : 30V ID : 100A RDS(ON) : 5.3 mΩ 1	Samwin

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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