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Datasheet TK7A90E Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 TK7A90E   MOSFETs

TK7A90E MOSFETs Silicon N-Channel MOS (π-MOS) TK7A90E 1. Applications • Switching Voltage Regulators 2. Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 1.6 Ω (typ.) Low leakage current : IDSS = 10 µA (max) (VDS = 720 V) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V, ID =
Toshiba Semiconductor
Toshiba Semiconductor
datasheet TK7A90E pdf

TK7A Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
TK7A60W

MOSFETs

TK7A60W MOSFETs Silicon N-Channel MOS (DTMOS) TK7A60W 1. Applications • Switching Voltage Regulators 2. Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.5 Ω (typ.) by used to Super Junction Structure : DTMOS Easy to control Gate switching Enhancement mode
Toshiba Semiconductor
Toshiba Semiconductor
datasheet pdf - Toshiba Semiconductor
TK7A90E

MOSFETs

TK7A90E MOSFETs Silicon N-Channel MOS (π-MOS) TK7A90E 1. Applications • Switching Voltage Regulators 2. Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 1.6 Ω (typ.) Low leakage current : IDSS = 10 µA (max) (VDS = 720 V) Enhancement mode: Vth = 2.5 to 4.0
Toshiba Semiconductor
Toshiba Semiconductor
datasheet pdf - Toshiba Semiconductor
TK7A50D

Field Effect Transistor

TK7A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK7A50D Switching Regulator Applications • • • • Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 2.5 S (typ.) Low leakage current: IDSS =
Toshiba Semiconductor
Toshiba Semiconductor
datasheet pdf - Toshiba Semiconductor


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SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

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